The MATS sources generate an inductively coupled plasma to dissociate various gases that include nitrogen, oxygen, hydrogen and other molecular gases. Using RF (13.56MHz) powered coil, the energy is transferred to the plasma, which results in a "soft" plasma that has minimal ion energy.
The MATS sources deliver high volume flux of electrostatically neutral atoms that are excellent for epitaxial growth of nitrides and oxides. The radicals are highly reactive and have a low kinetic energy and will not damage the epitaxial structure. A small amount of ions are generated in the process, but MATS sources can be equipped with charge deflection plates to ensure that the flux reaching the substrate is neutral.
The MATS series RF atom source is ideally suited for a wide range of applications, like:
- Oxide MBE growth, such as e.g. ZnO, Al2O3 and high-K dielectrics
- Nitride MBE-growth, such as e.g. GaN or GaInNAs
- Nitrogen Doping in II-VI materials, such as e.g. ZnTe, CdTe, CdZnTe, CdMgTe and ZnMgTe
- Oxygen Doping in III-V materials
Atomic Hydrogen Processing/Cleaning
The MATS series RF atom source can also be used for substrate cleaning using atomic hydrogen.